Microchip Technology 2N5151U3 BJTs - 바이폴라 트랜지스터 80V 2A 1W PNP 저프로파일 CER 파워 BJT SMT

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.16 W

DC Current Gain hFE Max: 90

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.5 V