Microchip Technology 2N5415S BJTs - 바이폴라 트랜지스터 200 V 파워 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 750 mW

DC Current Gain hFE Max: 120 at 50 mA, 10 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 200 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 50 mA, 10 V

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 2 V