Microchip Technology 2N5427 BJTs - 바이폴라 트랜지스터 파워 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 700 mV