빠른 지원
인증된 전문가에게 직접 연결
인증된 전문가에게 직접 연결

Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 150
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 1 V