Microchip Technology 2N6308 BJTs - 바이폴라 트랜지스터 파워 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 125 W

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 5 V