Microchip Technology APT100GN120J IGBT 모듈 IGBT 필드스톱 저주파 단일 1200 V 100 A SOT-227

Width: 25.4 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

Mounting Style: Screw Mount

Pd - Power Dissipation: 446 W

Operating Temperature Range: - 55 C to + 150 C

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 153 A