Microchip Technology APT200GN60B2G IGBT 트랜지스터 IGBT 필드스톱 저주파 단일 600 V 200 A TO-247 MAX

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 682 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 283 A