Microchip Technology APT20GT60BRDQ1G IGBT 트랜지스터 FG, IGBT, 600V, TO-247, RoHS

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 174 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 43 A