Microchip Technology APT25GN120SG IGBT 트랜지스터 IGBT 필드스톱 저주파 단일 1200 V 25 A TO-268

Width: 13.99 mm

Height: 5.08 mm

Length: 16.05 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 272 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 67 A

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 67 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 67 A