Microchip Technology APT35GN120L2DQ2G IGBT 트랜지스터 IGBT 필드스톱 저주파 콤비 1200 V 35 A TO-264 MAX

Width: 20.5 mm

Height: 5.21 mm

Length: 26.49 mm

Technology: Si

Unit Weight: 10.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 379 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 94 A

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 94 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 94 A