Microchip Technology APT35GN120SG IGBT 트랜지스터 IGBT 필드스톱 저주파 단일 1200 V 35 A TO-268

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 379 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 105 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 94 A