Microchip Technology APT40GR120S IGBT 트랜지스터 IGBT MOS 8 1200 V 40 A TO-268

Technology: Si

Unit Weight: 6.200 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 500 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 88 A