Microchip Technology APT50GF120JRD IGBT 모듈 IGBT NPT 저주파 콤비 1200 V 50 A SOT-227

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 460 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 75 A