Microchip Technology APT50GF120JRDQ3 IGBT 모듈 IGBT NPT 저주파 콤비 1200 V 50 A SOT-227

Width: 25.4 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 521 W

Operating Temperature Range: - 55 C to + 150 C

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 120 A