Microchip Technology APT50GP60J IGBT 모듈 IGBT PT MOS 7 싱글 600 V 50 A SOT-227

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 329 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 100 A