Microchip Technology APT50GT120LRG IGBT 트랜지스터 IGBT NPT 중주파 단일 1200 V 50 A TO-264

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 94 A