Microchip Technology APT75GP120J IGBT 모듈 IGBT PT MOS 7 싱글 1200 V 75 A SOT-227

Width: 25.4 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

Mounting Style: Screw Mount

Pd - Power Dissipation: 543 W

Operating Temperature Range: - 55 C to + 150 C

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.3 V

Continuous Collector Current at 25 C: 128 A