Microchip Technology APTGT100H60T3G IGBT 모듈 PM-IGBT-TFS-SP3F

Width: 40.8 mm

Height: 11.5 mm

Length: 73.4 mm

Technology: Si

Unit Weight: 363.500 g

Configuration: Full Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 340 W

Operating Temperature Range: - 40 C to + 175 C

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 150 A