Microchip Technology APTGT35A120T1G IGBT 모듈 트렌치 필드 스톱 1200V 55A 208W

Technology: Si

Unit Weight: 80 g

Configuration: Half Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 208 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 55 A