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인증된 전문가에게 직접 연결
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Gain: 17 dB
Fall Time: 10 ns
Rise Time: 6 ns
Technology: Si
Unit Weight: 20.016 g
Channel Mode: Enhancement
Output Power: 750 W
Mounting Style: Screw Mount
Operating Frequency: 40 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 kW
Vgs - Gate-Source Voltage: + 30 V
Operating Temperature Range: - 55 C to + 175 C
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 mS
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 5 V