Microchip Technology MSC080SMA120S SiC MOSFETS MOSFET SIC 1200 V 80 mOhm TO-268

Technology: SiC

Unit Weight: 6.200 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 182 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V