Microchip Technology MSC750SMA170S SiC MOSFETS MOSFET SIC 1700 V 750 mOhm TO-268

Technology: SiC

Unit Weight: 6.200 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 63 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 4.4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 750 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 3.25 V