Microchip Technology MSCSM70XM45CTYZBNMG 3상 브리지 PM-MOSFET-SIC-SBD-6HPD

Fall Time: 20 ns

Rise Time: 35 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel and SBD

Vf - Forward Voltage: 1.5 V

Pd - Power Dissipation: 141 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 700 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V