Microchip Technology MV2N5116UB/TR JFETs JFET

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: 4 V

Maximum Drain Gate Voltage: 30 V

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 175 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: 30 V