Microchip SST26VF016B-80E/SN 플래시 메모리, 시리얼 NOR, 16 Mbit, 2M x 8bit, SPI, SQI, SOIC, 8핀

Density: 16 Mbit

Package: 8SOIC

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

MSL Level: MSL 3 - 168 hours

Pin Count: 8

Boot Block: Yes

Access Time: 8 ns

Lead Finish: Matte Tin

No. of Pins: 8

Timing Type: Synchronous

Architecture: Sectored

Organization: 16M x 1|8M x 2|4M x 4

Interface Type: SPI

Memory Density: 16 Mbit

Number of Words: 16, 8, 4 Mbit

Program Current: 25 mA

Screening Level: Extended Industrial

Supplier Package: SOIC

Address Bus Width: 32 Bit

Block Organization: Symmetrical

Maximum Erase Time: 50/Chip ms

Product Dimensions: 4.9 x 3.9 x 1.5 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.3 V

Supply Voltage Nom: 3.3, 3 V

Clock Frequency Max: 80 MHz

Max Processing Temp: 260 °C

Programming Voltage: 2.3 to 3.6 V

Operating Temperature: -40 to 125 °C

Location Of Boot Block: Bottom|Top

Number of Bits per Word: 1, 2, 4 Bit

Maximum Programming Time: 1.5/Page ms

Maximum Operating Current: 20 mA

Operating Temperature Max: 125 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 8 ns

Simultaneous Read/Write Support: Yes

Maximum Operating Supply Voltage: 3.6 V

Minimum Operating Supply Voltage: 2.3 V

Typical Operating Supply Voltage: 2.5, 3 V

Erase Suspend/Resume Modes Support: Yes

Datasheet