Microsemi 2N6790U 표면 실장 N-채널 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 14.3nC

Power consumption: 800mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 200V

Continuous drain current: 2.8A

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 800mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V