Type: Power MOSFET
Vgs(th): 5 V
Gate Charge (Qg): 650nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 800V
Continuous drain current: 51A
Input Capacitance (Ciss): 9480pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 110mOhm
