Microsemi Jan2N5745 BJTs - 바이폴라 트랜지스터 80V 20A 5W PNP 파워 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 250

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V