Microsemi Jantx2N1711S BJTs - 바이폴라 트랜지스터 75V 500mA 800mW NPN 숏리드 파워 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 3 W

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 10 uA, 10 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 1.5 V