Microsemi Jantx2N3767 BJTs - 바이폴라 트랜지스터 80V 4A NPN 파워 BJT THT

Technology: Si

Unit Weight: 12.495 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 2.5 V