Microsemi Jantx2N6213 달링턴 트랜지스터 전력 BJT

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 35 W

Emitter- Base Voltage VEBO: 6 V

Maximum Operating Frequency: 5 MHz

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 4

Maximum Collector Cut-off Current: 15 mA

Collector- Emitter Voltage VCEO Max: 350 V