Nexperia 2N7002BKM,315 2N7002BKM/SOT883/XQFN3

Vgs(th): 2.1 V

Vgs (Max): 20V

Gate Charge (Qg): 0.6nC

Power consumption: 360mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 450mA

Input Capacitance (Ciss): 50pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.6Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V