Nexperia BCM847DS,115 BJTs - 바이폴라 트랜지스터 NPN/NPN 매칭된 더블 트랜지스터

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 10.800 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 380 mW

DC Current Gain hFE Max: 200 at 2 mA, 5 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 200 mV