Nexperia BF550,215 BJTs - 바이폴라 트랜지스터 PNP 중주파 트랜지스터

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 50 at 1 mA, 10 V

Gain Bandwidth Product fT: 325 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 25 mA

Maximum DC Collector Current: 25 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 40 V