Nexperia BF824W,135 BJTs - 바이폴라 트랜지스터 NPN 중주파 트랜지스터

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 25 at 1 mA, 10 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 25 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 at 1 mA, 10 V, 25 at 4 mA, 10 V

Collector- Emitter Voltage VCEO Max: 30 V