Nexperia BSH202,215 MOSFETs BSH202/SOT23/TO-236AB

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 2.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 417 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 520 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 900 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V