Nexperia BSN20BKR MOSFETs BSN20BK/SOT23/TO-236AB

Fall Time: 5.1 ns

Rise Time: 8.4 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Trench MOSFET

Qg - Gate Charge: 490 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 402 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.9 ns

Typical Turn-Off Delay Time: 12.5 ns

Id - Continuous Drain Current: 265 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 600 mV