Nexperia BST60-QX 다링턴 트랜지스터 PNP 다링턴 트랜지스터

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.3 W

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000 at - 150 mA, - 10 V

Maximum Collector Cut-off Current: 50 nA

Collector- Emitter Voltage VCEO Max: 45 V