Nexperia BUK4D38-20PH MOSFETs 20 V, P-채널 트렌치 MOSFET

Fall Time: 19 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: P-Channel Trench MOSFET

Qg - Gate Charge: 10.6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 19 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V