Nexperia BUK965R4-40E,118 MOSFET

Vgs(th): 2.1 V

Vgs (Max): 10V

Gate Charge (Qg): 33.9nC

Power consumption: 137W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 75A

Input Capacitance (Ciss): 4483pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.4mOhm

Drive Voltage (Max Rds On, Min Rds On): 5V