Nexperia BUK9675-55A,118 MOSFETs N-채널 TrenchMOS 로직 레벨 FET

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 62 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 68 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 2 V