Nexperia BUK9K35-60RAX MOSFETs 듀얼 N-채널 트렌치MOS 로직 레벨 FET

Fall Time: 10.6 ns

Rise Time: 11.3 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 7.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 38 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 7.1 ns

Typical Turn-Off Delay Time: 14.9 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V