Nexperia GAN7R0-150LBEZ GaN FETs SOT8073 150V 28A FET

Technology: GaN

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 7.6 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V