Nexperia NHDTC124EU-QX BJTs - 바이폴라 트랜지스터 80 V, 100 mA NPN 저항기 내장 트랜지스터

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 315 mW

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 80 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 100 mV