Nexperia PBSS4250X,135 BJTs - 바이폴라 트랜지스터 60 V, 2 A NPN/NPN 저 VCEsat (BISS) 트랜지스터

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 40.074 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 550 mW

DC Current Gain hFE Max: 300 at 100 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 380 mV