Nexperia PEMX1,315 BJTs - 바이폴라 트랜지스터 NPN/PNP 범용 트랜지스터

Technology: Si

Unit Weight: 2.700 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 275

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 200 mV