Nexperia PMV213SN,215 MOSFETs 60V, N-채널 트렌치 MOSFET

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 1.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V