Nexperia PMXB75UPEZ MOSFETs N-채널 TrenchMOS 표준 레벨 FET

Fall Time: 15 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 1.280 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.8 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.07 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 2.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.4 S

Rds On - Drain-Source Resistance: 950 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV