Nexperia PSMN022-30PL,127 MOSFETs PSMN022-30PL/SOT78/SIL3P

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 41 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 22 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V