Nexperia PSMN2R9-100SSEJ MOSFETs N-채널 25 V, 3.15 mΩ 로직 레벨 MOSFET LFPAK 패키지, NextPower 기술 사용

Fall Time: 43 ns

Rise Time: 35 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 125 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 341 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 31 ns

Typical Turn-Off Delay Time: 61 ns

Id - Continuous Drain Current: 210 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.9 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V